Event Title

Preparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions

Session

Energy Efficiency Engineering

Description

Zinc oxide (ZnO) is widely used in solar cells, gas sensors, photodetectors due to its unique properties, inexpensive, high transmittance and wide optical band gap. These properties make it good candidate as host materials for the UV-vis emission of various rare earth (RE) elements. So, RE elements doped ZnO films have been increasingly taking an important role in optoelectronics and photonics. In this study, La doped ZnO (ZnO:La) films were prepared by the low-cost sol gel method using the spin coating technique. The crystalline structure and surface morphology of the films were analyzed by using an X-ray diffractometer and a field emission model scanning electron microscopy, respectively. The p-Si/n-ZnO: La heterojunction structures were fabricated. In order to characterize the electrical behavior of thesestructures, the current-voltage (I-V) characteristics were performed. It was observed that all of them showedgood rectifying behavior.The diode parameters were determined by using different methods.

Keywords:

La doped ZnO, Nanostructure, Sol gel, p-n heterojunction

Session Chair

Vehebi Sofiu

Session Co-Chair

Bertan Karahoda

Proceedings Editor

Edmond Hajrizi

ISBN

978-9951-437-54-7

Location

Durres, Albania

Start Date

27-10-2017 4:45 PM

End Date

27-10-2017 6:15 PM

Comments

Acknowledgement. This work was supported by Anadolu University Commission of Research Projects under Grant no. 1501F032.

DOI

10.33107/ubt-ic.2017.146

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Oct 27th, 4:45 PM Oct 27th, 6:15 PM

Preparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions

Durres, Albania

Zinc oxide (ZnO) is widely used in solar cells, gas sensors, photodetectors due to its unique properties, inexpensive, high transmittance and wide optical band gap. These properties make it good candidate as host materials for the UV-vis emission of various rare earth (RE) elements. So, RE elements doped ZnO films have been increasingly taking an important role in optoelectronics and photonics. In this study, La doped ZnO (ZnO:La) films were prepared by the low-cost sol gel method using the spin coating technique. The crystalline structure and surface morphology of the films were analyzed by using an X-ray diffractometer and a field emission model scanning electron microscopy, respectively. The p-Si/n-ZnO: La heterojunction structures were fabricated. In order to characterize the electrical behavior of thesestructures, the current-voltage (I-V) characteristics were performed. It was observed that all of them showedgood rectifying behavior.The diode parameters were determined by using different methods.