Event Title

Identification of high-performance anodic memristors by combinatorial screening in hafnium-tantalum library

Session

Pharmaceutical and Natural Sciences

Description

The metal-oxide- semiconductor technology (CMOS) has already reached its limits in terms of scaling, power consumption and processing speed. With this regard, the development of novel memory systems is vital. Memristive devices are scalable alternatives in the next generation of electronics showing non-volatile properties. Valve metals such as Hf and Ta are high-κ dielectric materials used for metal-insulator- metal architectures with the memory concept based on the resistive switching due to the nano-dimensional conductive filaments (CFs) formation inside of the insulating oxide. The aim of this study was to investigate the memristive behavior of devices based on pure Hf, Ta and their alloys which were sputtered as bottom electrodes onto the Si wafer. The total compositional spread of Hf-Ta library was ranging from 5 to 92 at.% Hf. The insulating layer with the thickness up to 20 nm was fabricated via simple, inexpensive and fast electrochemical anodization process. Hence, a high number of memristors was finalized by patterning Pt top electrodes. Electrical properties of devices were screened with 1 at.% resolution using self-developed Gantry robot revealing three different compositional zones with specific memory characteristics. The switching mechanism was confirmed by depth profile investigation by XPS and imaging of CFs by HRTEM. Nanofilaments differed in size, shape and position in the oxide for the devices based on Hf, Ta or their alloys. The produced memristors have shown remarkable improvement in their performance which may lead towards the development of defect engineered memristors applicable for artificial neural networks.

[1] I. Zrinski, C.C. Mardare, L.-I. Jinga, J.P. Kollender, G. Socol, A.W. Hassel, A.I. Mardare, Phosphate incorporation in anodic hafnium oxide memristors, Appl. Surf. Sci. 548 (2021) 149093. https://doi.org/10.1016/j.apsusc.2021.149093.

[2] I. Zrinski, C.C. Mardare, L.I. Jinga, J.P. Kollender, G. Socol, A. Minenkov, A.W. Hassel, A.I. Mardare, Electrolyte‐dependent modification of resistive switching in anodic hafnia, Nanomaterials. 11 (2021) 1–18. https://doi.org/10.3390/nano11030666.

[3] I. Zrinski, A. Minenkov, C.C. Mardare, J.P. Kollender, S.A. Lone, A.W. Hassel, A.I. Mardare, Influence of electrolyte selection on performance of tantalum anodic oxide memristors, Appl. Surf. Sci. 565 (2021) 150608. https://doi.org/10.1016/j.apsusc.2021.150608.

Keywords:

thin films, anodic oxides, valve metals, memristors

Proceedings Editor

Edmond Hajrizi

ISBN

978-9951-550-47-5

First Page

1

Location

UBT Kampus, Lipjan

Start Date

30-10-2021 12:00 AM

End Date

30-10-2021 12:00 AM

DOI

10.33107/ubt-ic.2021.84

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Oct 30th, 12:00 AM Oct 30th, 12:00 AM

Identification of high-performance anodic memristors by combinatorial screening in hafnium-tantalum library

UBT Kampus, Lipjan

The metal-oxide- semiconductor technology (CMOS) has already reached its limits in terms of scaling, power consumption and processing speed. With this regard, the development of novel memory systems is vital. Memristive devices are scalable alternatives in the next generation of electronics showing non-volatile properties. Valve metals such as Hf and Ta are high-κ dielectric materials used for metal-insulator- metal architectures with the memory concept based on the resistive switching due to the nano-dimensional conductive filaments (CFs) formation inside of the insulating oxide. The aim of this study was to investigate the memristive behavior of devices based on pure Hf, Ta and their alloys which were sputtered as bottom electrodes onto the Si wafer. The total compositional spread of Hf-Ta library was ranging from 5 to 92 at.% Hf. The insulating layer with the thickness up to 20 nm was fabricated via simple, inexpensive and fast electrochemical anodization process. Hence, a high number of memristors was finalized by patterning Pt top electrodes. Electrical properties of devices were screened with 1 at.% resolution using self-developed Gantry robot revealing three different compositional zones with specific memory characteristics. The switching mechanism was confirmed by depth profile investigation by XPS and imaging of CFs by HRTEM. Nanofilaments differed in size, shape and position in the oxide for the devices based on Hf, Ta or their alloys. The produced memristors have shown remarkable improvement in their performance which may lead towards the development of defect engineered memristors applicable for artificial neural networks.

[1] I. Zrinski, C.C. Mardare, L.-I. Jinga, J.P. Kollender, G. Socol, A.W. Hassel, A.I. Mardare, Phosphate incorporation in anodic hafnium oxide memristors, Appl. Surf. Sci. 548 (2021) 149093. https://doi.org/10.1016/j.apsusc.2021.149093.

[2] I. Zrinski, C.C. Mardare, L.I. Jinga, J.P. Kollender, G. Socol, A. Minenkov, A.W. Hassel, A.I. Mardare, Electrolyte‐dependent modification of resistive switching in anodic hafnia, Nanomaterials. 11 (2021) 1–18. https://doi.org/10.3390/nano11030666.

[3] I. Zrinski, A. Minenkov, C.C. Mardare, J.P. Kollender, S.A. Lone, A.W. Hassel, A.I. Mardare, Influence of electrolyte selection on performance of tantalum anodic oxide memristors, Appl. Surf. Sci. 565 (2021) 150608. https://doi.org/10.1016/j.apsusc.2021.150608.