Preparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions
Session
Energy Efficiency Engineering
Description
Zinc oxide (ZnO) is widely used in solar cells, gas sensors, photodetectors due to its unique properties, inexpensive, high transmittance and wide optical band gap. These properties make it good candidate as host materials for the UV-vis emission of various rare earth (RE) elements. So, RE elements doped ZnO films have been increasingly taking an important role in optoelectronics and photonics. In this study, La doped ZnO (ZnO:La) films were prepared by the low-cost sol gel method using the spin coating technique. The crystalline structure and surface morphology of the films were analyzed by using an X-ray diffractometer and a field emission model scanning electron microscopy, respectively. The p-Si/n-ZnO: La heterojunction structures were fabricated. In order to characterize the electrical behavior of thesestructures, the current-voltage (I-V) characteristics were performed. It was observed that all of them showedgood rectifying behavior.The diode parameters were determined by using different methods.
Keywords:
La doped ZnO, Nanostructure, Sol gel, p-n heterojunction
Session Chair
Vehebi Sofiu
Session Co-Chair
Bertan Karahoda
Proceedings Editor
Edmond Hajrizi
ISBN
978-9951-437-54-7
Location
Durres, Albania
Start Date
27-10-2017 4:45 PM
End Date
27-10-2017 6:15 PM
DOI
10.33107/ubt-ic.2017.146
Recommended Citation
Ilican, Saliha; Buyuk, Gonca Ilgu; Caglar, Yasemin; and Caglar, Mujdat, "Preparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions" (2017). UBT International Conference. 146.
https://knowledgecenter.ubt-uni.net/conference/2017/all-events/146
Preparation of nanostructure ZnO: La film by low-cost solgel method and determination of diode parameters of p-Si/n-ZnO: La heterojunctions
Durres, Albania
Zinc oxide (ZnO) is widely used in solar cells, gas sensors, photodetectors due to its unique properties, inexpensive, high transmittance and wide optical band gap. These properties make it good candidate as host materials for the UV-vis emission of various rare earth (RE) elements. So, RE elements doped ZnO films have been increasingly taking an important role in optoelectronics and photonics. In this study, La doped ZnO (ZnO:La) films were prepared by the low-cost sol gel method using the spin coating technique. The crystalline structure and surface morphology of the films were analyzed by using an X-ray diffractometer and a field emission model scanning electron microscopy, respectively. The p-Si/n-ZnO: La heterojunction structures were fabricated. In order to characterize the electrical behavior of thesestructures, the current-voltage (I-V) characteristics were performed. It was observed that all of them showedgood rectifying behavior.The diode parameters were determined by using different methods.
Comments
Acknowledgement. This work was supported by Anadolu University Commission of Research Projects under Grant no. 1501F032.