The resistive switching in the anodized Nb-Ta library system
Session
Pharmaceutical and Natural Sciences
Description
Conventional memory technology has reached its limits concerning power consumption, scalability, and processing speed. The reason behind these issues is the so-called von Neuman bottleneck in which the architecture of the machines is based on separated memory and processing units. For this reason, the memristive device can be an excellent replacement for conventional memories since they are in-memory computing systems. Memristors as a non-volatile type of memory which can be further applied for neuromorphic applications, ReRAM memories, or sensing applications.
In this study, metal-insulator-metal (MIM) structured memristive devices were grown anodically on pre-oxidized Si wafers. Valve metals such as Nb and Ta have been used as bottom electrodes, while their oxidized forms played a role of an insulating layers with Pt patterned as top electrodes. Niobium and Ta oxides have already shown promising memristive switching characteristics. In order to improve the performance of such devices, Nb and Ta were mixed. In this way, the Nb-Ta library was produced. Niobium-tantalum system contains high number of alloys with a compositional spread ranging from 13 at.% Ta to 78 at.% Ta. Finally, high-performance Nb-Ta anodic memristors were identified, while their switching mechanism was studied using TEM and XPS. Conclusively, these devices may broaden their application range either as selector devices and ReRAM memories.
Keywords:
memristive devices, Valve metals, Niobium and Ta oxides.
Proceedings Editor
Edmond Hajrizi
ISBN
978-9951-550-50-5
Location
UBT Kampus, Lipjan
Start Date
29-10-2022 12:00 AM
End Date
30-10-2022 12:00 AM
DOI
10.33107/ubt-ic.2022.99
Recommended Citation
Zrinski, Ivana; Hassel, Achim Walter; and Mardare, Andrei Ionut, "The resistive switching in the anodized Nb-Ta library system" (2022). UBT International Conference. 99.
https://knowledgecenter.ubt-uni.net/conference/2022/all-events/99
The resistive switching in the anodized Nb-Ta library system
UBT Kampus, Lipjan
Conventional memory technology has reached its limits concerning power consumption, scalability, and processing speed. The reason behind these issues is the so-called von Neuman bottleneck in which the architecture of the machines is based on separated memory and processing units. For this reason, the memristive device can be an excellent replacement for conventional memories since they are in-memory computing systems. Memristors as a non-volatile type of memory which can be further applied for neuromorphic applications, ReRAM memories, or sensing applications.
In this study, metal-insulator-metal (MIM) structured memristive devices were grown anodically on pre-oxidized Si wafers. Valve metals such as Nb and Ta have been used as bottom electrodes, while their oxidized forms played a role of an insulating layers with Pt patterned as top electrodes. Niobium and Ta oxides have already shown promising memristive switching characteristics. In order to improve the performance of such devices, Nb and Ta were mixed. In this way, the Nb-Ta library was produced. Niobium-tantalum system contains high number of alloys with a compositional spread ranging from 13 at.% Ta to 78 at.% Ta. Finally, high-performance Nb-Ta anodic memristors were identified, while their switching mechanism was studied using TEM and XPS. Conclusively, these devices may broaden their application range either as selector devices and ReRAM memories.